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Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation
Apparatus and method for hydrogenating polysilicon thin film transistors by plasma immersion ion implantation
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机译:通过等离子体浸没离子注入来氢化多晶硅薄膜晶体管的设备和方法
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摘要
A method for hydrogenating a thin film semiconductor wafer and an apparatus for performing the method. The method comprises the steps of applying a pulsed potential having a predetermined amplitude, a predetermined frequency, and a predetermined pulse duration to the thin film semiconductor wafer while exposing the thin film semiconductor wafer to a hydrogen plasma. The apparatus performs this method through the utilization of an inductively-coupled plasma (ICP) source so as to allow saturation of device parameter improvements within a reduced process time of 5 minutes. The ICP source allows this reduced process time to be achieved in a low energy, high dose rate plasma immersion ion implantation (PIII) hydrogenation process according to the present invention.
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