Performance Evaluation of Silicon and Germanium Ultrathin Body (1 nm) Junctionless Field-Effect Transistor With Ultrashort Gate Length (1 nm and 3 nm)

摘要

Silicon (Si) and Germanium (Ge) ultrathin body junctionless field-effect transistor (UTB-JLFET) with nm and nm were demonstrated by solving the coupled drift-diffusion and density-gradient model. The simulation results show that the Si and Ge channel can be used in ultrashort channel device as long as UTB is employed. As UTB is employed, ultra-short channel device does not need to follow an empirical rule of . Furthermore, Ge UTB-JLFET 6T-SRAM cell has reasonable static noise margin value of 149 mV. The circuit performances reveal that UTB-JLFET can be used for sub-5-nm CMOS technology nodes.