Dual-Sweep Combinational Transconductance Technique for Separate Extraction of Parasitic Resistances in Amorphous Thin-Film Transistors

摘要

We report a dual-sweep combinational transconductance technique for separate extraction of parasitic source () and drain () resistances in thin-film transistors (TFTs) by combining forward and reverse transfer characteristics. In the proposed technique, gate bias-dependent total resistance [ ()] and degradation of the transcond- uctance due to the parasitic resistance at the source terminal during the dual-sweep characterization are employed. Applying the proposed technique to amorphous oxide semiconductor TFTs with various combinations of channel length () and width (), we successfully separated and . A model for the - and -dependences of the extracted parasitic resistances is also provided.