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首页> 外文期刊>Electron Device Letters, IEEE >A Sandwich-Type Thermoelectric Microwave Power Sensor for GaAs MMIC-Compatible Applications
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A Sandwich-Type Thermoelectric Microwave Power Sensor for GaAs MMIC-Compatible Applications

机译:用于GaAs MMIC兼容应用的三明治型热电微波功率传感器

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摘要

This letter presents a sandwich-type non-microelectromechanical system (MEMS) thermoelectric microwave power sensor, which is based on the conversion principle of microwave power-heat-electricity. To reduce heat loss, a thermopile is designed to lie beneath two matching load resistors, electrically isolated by a dielectric layer. The design enables this sensor to eliminate the need for MEMS technology. To verify the design validity, the sandwich-type non-MEMS microwave sensor is fabricated together with a MEMS sensor. This improved sandwich-type sensor offers compatibility with the GaAs monolithic microwave integrated circuit technology. Experiments show that these sensors produce reflection losses of less than −20 dB up to 20 GHz. At 1, 10, and 20 GHz, the measured average sensitivities are ~101, 71.7, and 54.1μV−1⋅mW for the traditional MEMS sensor and approximately 130.2, 92.3, and 66.8μV−1⋅mW for the improved non-MEMS sensor, respectively, with good linearity of the output responses.
机译:这封信介绍了一种基于微波功率-热电转换原理的三明治型非微机电系统(MEMS)热电微波功率传感器。为了减少热量损失,将热电堆设计为位于两个匹配的负载电阻器下面,并通过介电层将其电隔离。该设计使该传感器消除了对MEMS技术的需求。为了验证设计的有效性,将三明治型非MEMS微波传感器与MEMS传感器一起制造。这种改进的夹心式传感器与GaAs单片微波集成电路技术兼容。实验表明,这些传感器在高达20 GHz的频率下产生的反射损耗小于-20 dB。在1 GHz,10 GHz和20 GHz时,传统MEMS传感器的平均灵敏度为〜101、71.7和54.1μV-1·mW,而改进型非MEMS传感器的平均灵敏度约为130.2、92.3和66.8μV-1·mW传感器分别具有良好的线性度的输出响应。

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