VO₂-Based Selection Device for Passive Resistive Random Access Memory Application

摘要

Low operation voltage, large resistance ratio, and good uniformity were achieved in W/VO2/Pt selection device. The selector is applied to Ti/HfO2/Pt resistive random access memory (RRAM) device, forming 1S1R configuration, to reduce the sneak path current. Ti/HfO2/Pt crosspoint array size can be improved from 8×8 to 128×128 by introducing the W/VO2/Pt selection device from readout margin simulation. In addition, the selector can be used in sub-10-nm scale RRAM to suppress sneak leakage current.