A Separate Extraction Method for Asymmetric Source and Drain Resistances Using Frequency-Dispersive – Characteristics in Exfoliated MoS₂ FET

摘要

Asymmetric source and drain (S/D) series resistances ( and ) are unavoidable in exfoliated MoS field-effect transistors (EM-FETs). Through combining the capacitance–voltage (–) and current–voltage characteristics, the asymmetric and values are extracted separately. First, the frequency-dispersive – characteristics are analyzed in a frequency range of 0.3–10 kHz. Second, the intrinsic and values ( and are characterized through deembedding the parasitic pad capacitances ( between the S/D metal and the bottom gate (G) in an overlapped region with the consideration of the structure-dependent parameters in the EM-FET. The proposed methodology is verified through comparison with the well-known channel resistance method, which is based on only the – characteristics in the linear region. Finally, and at various parasitic overlap areas are extracted separately with improved accuracy.