机译:具有Al2O3栅介质的MoS2 n-MOSFET的PBTI研究
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Department of Electronic Engineering, National Chiao-Tung University, Hsinchu, Taiwan;
Department of Microelectronics, State Key Laboratory of ASIC and System, Fudan University, Shanghai, China;
Stress; Molybdenum; Sulfur; Logic gates; Stress measurement; Voltage measurement; Electron traps;
机译:具有Al2O3 / HFO2的栅极堆叠电介质的顶门和底门多层MOS2晶体管的比较研究
机译:研究HfSiON栅极介电MOSFET陷阱特性的新型瞬态表征技术-从单电子发射到PBTI恢复瞬态
机译:提高了具有通过Al2O3电介质完全封装的通道的顶门多层MOS2晶体管的性能
机译:PBTI应力下MoS2 n-MOSFET中Al2O3栅极电介质中氧化物边界陷阱的俘获和去陷阱
机译:二硫化钼 的 纳米摩擦学 考察 通过 原子力显微镜
机译:使用掺Sr的Al2O3栅介质的高迁移率喷墨印刷铟镓锌氧化物薄膜晶体管
机译:提高了具有通过Al2O3电介质完全封装的通道的顶门多层MOS2晶体管的性能