机译:具有Al2O3 / HFO2的栅极堆叠电介质的顶门和底门多层MOS2晶体管的比较研究
Jianghan Univ Dept Electromachine Engn Wuhan 430056 Hubei Peoples R China;
Huazhong Univ Sci &
Technol Sch Opt &
Elect Informat Wuhan 430074 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Artificial Micro &
Nanostruct Minist Educ China Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Artificial Micro &
Nanostruct Minist Educ China Wuhan 430072 Hubei Peoples R China;
Jianghan Univ Dept Electromachine Engn Wuhan 430056 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Artificial Micro &
Nanostruct Minist Educ China Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Artificial Micro &
Nanostruct Minist Educ China Wuhan 430072 Hubei Peoples R China;
Wuhan Univ Sch Phys &
Technol Key Lab Artificial Micro &
Nanostruct Minist Educ China Wuhan 430072 Hubei Peoples R China;
multilayer MoS2; field-effect transistors; stacked dielectrics; encapsulation; reliability;
机译:具有Al2O3 / HFO2的栅极堆叠电介质的顶门和底门多层MOS2晶体管的比较研究
机译:退火对原子层沉积HfO2栅电介质的多层MoS2晶体管电性能的影响
机译:在ln_(0.53)Ga_(0.47)As上沉积原子层堆积的(HfO2 / Al2O3)和纳米层压的(HfAIO_x)电介质的比较研究
机译:具有高k电介质的顶级MoS2电容器和晶体管用于接口研究
机译:高k HfO2栅介质的射频溅射ZnO薄膜晶体管制造条件的优化。
机译:ALD沉积La2O3 / Al2O3叠层和LaAlO3介电薄膜的电学性能研究
机译:提高了具有通过Al2O3电介质完全封装的通道的顶门多层MOS2晶体管的性能