METHOD FOR MANUFACTURING CAPACITOR OF SEMICONDUCTOR DEVICE USING DOUBLE LAYER OF Al2O3/HfO2 AS DIELECTRIC FILM

摘要

PURPOSE: A method for manufacturing a capacitor of a semiconductor device is provided to enhance capacitance and to obtain good leakage current by using a double layer of Al2O3/HfO2 as a dielectric film. CONSTITUTION: A lower electrode(13) is formed on a semiconductor substrate(10). A HfO2 layer(14A) as a first dielectric film is deposited on the lower electrode. The surface of the HfO2 layer is treated by nitrification. By depositing an alumina film as a second dielectric film on the first dielectric film, a double dielectric film(14) made of Al2O3/HfO2 is formed. The dielectric film is crystallized. An upper electrode is then formed on the dielectric film.