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Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method

机译：原子层沉积法制备栅介质ZrO2 / al2O3双层薄膜的特性

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Yangdo Kim; Janghee Lee; Jaehyoung Koo; Ho Jung Chang; Hyeongtag Jeon;
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1. 等离子喷涂制备 Al2O3，ZrO2，Al2O3/ZrO2和ZrO2/Al2O3涂层的腐蚀性能 [J] . S. SATHISH, M. GEETHA 中国有色金属学报（英文版） . 2016,第005期
2. 等离子喷涂制备Al2O3,ZrO2,Al2O3/ZrO2和ZrO2/Al2O3涂层的腐蚀性能 [J] . S., SATHISH, M., 中国有色金属学报：英文版 . 2016,第005期
3. A Comparison of Al_2O_3/HfO_2 and Al_2O_3/ZrO_2 Bilayers Deposited by the Atomic Layer Deposition Method for Potential Gate Dielectric Applications [J] . Inhoe Kim, Jaehyoung Koo, Janghee Lee, Japanese Journal of Applied Physics. Part 1, Regular Papers, Brief Communications & Review Papers . 2006,第2A期

机译：潜在栅极电介质应用原子层沉积方法沉积的Al_2O_3 / HfO_2和Al_2O_3 / ZrO_2双层的比较
4. Characteristics of Al2O3/ZrO2 laminated films deposited by ozone-based atomic layer deposition for organic device encapsulation [J] . Oh Juhong, Shin Seokyoon, Park Joohyun, Thin Solid Films . 2016,第jana29期

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5. Characteristics of nanocomposite ZrO2/Al2O3 films deposited by plasma-enhanced atomic layer deposition [J] . Yun SJ, Lim JW, Kim HT Journal of nanoscience and nanotechnology . 2007,第11期

机译：等离子增强原子层沉积纳米复合ZrO2 / Al2O3薄膜的特性
6. Characteristics of ZrO_2/Al_2O_3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method [C] . Yangdo Kim, Janghee Lee, Jaehyoung Koo, International Symposium on Designing, Processing and Properties of Advanced Engineering Materials(ISAEM 2003) pt.1; 20031105-20031108; Jeju Island; KR . 2003

机译：原子层沉积法制备的ZrO_2 / Al_2O_3双层薄膜栅电介质薄膜的特性
7. Atomic Layer Deposited Al2O3 and TiO2 for High-k Dielectric and Memory Applications [D] . Tang, Kechao. 2017

机译：用于高k电介质和存储器应用的原子层沉积Al2O3和TiO2
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Characteristics of ZrO2/Al2O3 Bilayer Film for Gate Dielectric Applications Deposited by Atomic Layer Deposition Method

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