Multi-Channel AlGaN/GaN Lateral Schottky Barrier Diodes on Low-Resistivity Silicon for Sub-THz Integrated Circuits Applications

摘要

This paper presents novel multi-channel RF lateral Schottky-barrier diodes (SBDs) based on AlGaN/GaN on low resistivity (LR) (sigma = 0.02 Omega.cm) silicon substrates. The developed technology offers a reduction of 37 % in onset voltage, V-ON (from 1.34 to 0.84 V), and 36 % in ON-resistance, R-ON (1.52 to 0.97 to Omega.mm) as a result of lowering the Schottky barrier height, Phi(n), when compared to conventional lateral SBDs. No compromise in reverse-breakdown voltage and reverse-bias leakage current performance was observed as both multi-channel and conventional technologies exhibited V-BV of (V-BV > 30 V) and I-R of (I-R < 38 mu A/mm), respectively. Furthermore, a precise small-signal equivalent circuit model was developed and verified for frequencies up to 110 GHz. The fabricated devices exhibited cut-off frequencies of up to 0.6 THz, demonstrating the potential use of lateral AlGaN/GaN SBDs on LR silicon for high-efficiency, high-frequency integrated circuits applications.