首页> 外国专利> Integrated injection logic switching circuit - has coupled lateral and transverse transistors and Schottky diode barrier

Integrated injection logic switching circuit - has coupled lateral and transverse transistors and Schottky diode barrier

机译:集成注入逻辑开关电路-具有耦合的横向和横向晶体管以及肖特基二极管势垒

摘要

The integrated switching circuit has a first lateral transistor, at least a second transverse transistor having one or several collectors. The base region of the or each second transistor forms also an independent collector region of the first transistor. The base region of the first transistor forms the emitter region of the or each second transistors. The or each second transistor has an input terminal connected to its base, an output terminal connected to the or to ach collector and a Schottky barrier diode individually formed between the base and the emitter was to avoid excessive charge accumulation from the first transistor to the base of the second transistor.
机译:集成开关电路具有第一横向晶体管,至少第二横向晶体管具有一个或多个集电极。每个第二晶体管的基极区域也形成第一晶体管的独立集电极区域。第一晶体管的基极区域形成该第二晶体管或每个第二晶体管的发射极区域。第二晶体管或每个第二晶体管的输入端子连接到其基极,输出端子连接到或集电极,肖特基势垒二极管分别形成在基极和发射极之间,以避免从第一晶体管到基极积累过多的电荷。第二个晶体管的

著录项

  • 公开/公告号DE2543699A1

    专利类型

  • 公开/公告日1977-04-07

    原文格式PDF

  • 申请/专利权人 TEXAS INSTRUMENTS INC.;

    申请/专利号DE19752543699

  • 发明设计人 DEN BRINKERCARL SIEGMUND;

    申请日1975-09-30

  • 分类号H01L27/04;

  • 国家 DE

  • 入库时间 2022-08-23 00:04:23

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