Fast-Switching Lateral IGBT with Trench/Planar Gate and Integrated Schottky Barrier Diode (SBD)

摘要

A novel fast-switching lateral IGBT with trench/planar gate and integrated Schottky barrier diode (SBD) is proposed and studied in this paper by TCAD simulation. The proposed LIGBT consists of the trench/planar gate (TP) at the cathode and an integrated SBD at the anode to reduce turn-off time and maintain a low forward voltage drop. The integrated SBD provides an extra electron extraction path and the additional trench gate enhances the injection of the N⁺-cathode. The insulated oxide pillar between the N-buffer and integrated SBD further reduces the snapback voltage. The simulation results show that the turn-off time of the conventional LIGBT is 52.4% larger than that of the proposed LIGBT. Moreover, the latch current density of the proposed LIGBT is increased by nearly 200% compared to that of the conventional LIGBT which means that the proposed LIGBT can improve the latch immunity.