Simulation Study of Overlap Capacitance in Source-Gated Transistors for Current-Mode Pixel Drivers

Raymond Drury; Eva Bestelink; Radu A. Sporea

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Simulation Study of Overlap Capacitance in Source-Gated Transistors for Current-Mode Pixel Drivers

机译：电流模式像素驱动器的源极门控晶体管中重叠电容的仿真研究

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摘要

Contrary to conventional design principles, current-driven pixel drivers based on source-gated transistors (SGTs) achieve their optimal drive current and speed with a deliberate 5–10-

机译：与传统的设计原理相反，基于源极门控晶体管（SGT）的电流驱动像素驱动器以故意的5–10-

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来源
《IEEE Electron Device Letters》 |2019年第9期|1451-1454|共4页
作者
Raymond Drury; Eva Bestelink; Radu A. Sporea;
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作者单位

Department of Electrical and Electronic Engineering Advanced Technology Institute University of Surrey Guildford U.K.;

Department;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Logic gates; Capacitance; Thin film transistors; Organic light emitting diodes; Capacitors; Fabrication;

机译：逻辑门电容;薄膜晶体管;有机发光二极管;电容器;制造;

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4. Source-gated transistors for improved current-mode pixel drivers [C] . R. A. Sporea, J. M. Shannon, S. R. P. Silva, Proceedings of China display / Asia display 2011 . 2011

机译：源极门控晶体管，用于改进电流模式像素驱动器
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Simulation Study of Overlap Capacitance in Source-Gated Transistors for Current-Mode Pixel Drivers

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