Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors

Hiroshi Tsuji; Tatsuya Takei; Mitsuru Nakata; Masashi Miyakawa; Yoshihide Fujisaki

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Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors

机译：钽掺杂对高迁移率氮氧化锌薄膜晶体管电学特性的影响

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The effects of Ta doping on the electrical characteristics of high-mobility zinc oxynitride (ZnON) thin-film transistors (TFTs) are investigated. With increasing Ta content (

机译：研究了Ta掺杂对高迁移率氮氧化锌（ZnON）薄膜晶体管（TFT）的电学特性的影响。随着Ta含量的增加（

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来源
《IEEE Electron Device Letters》 |2019年第9期|1435-1438|共4页
作者
Hiroshi Tsuji; Tatsuya Takei; Mitsuru Nakata; Masashi Miyakawa; Yoshihide Fujisaki;
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作者单位

Science and Technology Research Laboratories Japan Broadcasting Corporation (NHK) Tokyo Japan;

Science and Technology Research Laboratories Japan Broadcast;

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收录信息美国《科学引文索引》(SCI);美国《工程索引》(EI);
原文格式 PDF
正文语种 eng
中图分类
关键词
Doping; Thin film transistors; Annealing; Films; Silicon; Nitrogen; Logic gates;

机译：掺杂薄膜晶体管;退火;电影;硅;氮;逻辑门;

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1. Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors [J] . Broadcast technology . 2020,第82期

机译：钽掺杂对高迁移率氧化锌薄膜晶体管电特性的影响
2. Electrical instability of high-mobility zinc oxynitride thin-film transistors upon water exposure [J] . Kim Dae-Hwan, Jeong Hwan-Seok, Kwon Hyuck-In Nanotechnology . 2017,第9期

机译：高迁移率氧氮化锌薄膜晶体管的电不稳定性
3. Effect of Channel Layer Thickness on Electrical and Thermal Stabilities of High-Mobility Zinc Oxynitride Thin-Film Transistors [J] . Kim Dae-Hwan, Park Min Jae, Kwon Hyuck-In ECS Journal of Solid State Science and Technology . 2017,第9期

机译：通道层厚度对高迁移率氧化锌薄膜晶体管的电气和热稳定性的影响
4. Effects of Tantalum Doping on Electrical Characteristics of Indium-Gallium-Zinc Oxide Thin-Film Transistors [C] . Seung-Ryum Baek, Tae-Yeon Seong Pacific Rim Meeting on Electrochemical and Solid-State Science . 2020

机译：钽掺杂对氧化铟 - 氧化锌薄膜晶体管电特性的影响
5. Investigation of Electrical Instabilities and Interface Charge in Zinc Oxide Thin-Film Transistors with High-k Dielectrics. [D] . Siddiqui, Jeffrey Jameel. 2012

机译：高k电介质氧化锌薄膜晶体管的电不稳定性和界面电荷的研究。
6. High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric [O] . Seungbeom Choi, Kyung-Tae Kim, Sung Kyu Park, 2019

机译：使用掺Sr的Al2O3栅介质的高迁移率喷墨印刷铟镓锌氧化物薄膜晶体管
7. Boosting Carrier Mobility in Zinc Oxynitride Thin-Film Transistors via Tantalum Oxide Encapsulation [O] . -1

机译：通过氧化钽封装促进氧化锌薄膜晶体管中的载流子迁移率
8. High-mobility Carbon-nanotube Thin-film Transistors on a Polymeric Substrate. [R] . E. S. Snow J. P. Novak M. G. Ancona P. M. Campbell 2005

机译：聚合物基板上的高迁移率碳纳米管薄膜晶体管。

Effects of Tantalum Doping on Electrical Characteristics of High-Mobility Zinc Oxynitride Thin-Film Transistors

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