Azido-e?‘?-meconine-`high orthoa€? Novolak resin-based negative photoresists for deep UV lithography

摘要

Photoactive chemicals blended with polymers, solvents and certain other additives serve as photoresists. A new photoactive compound (PAC), azido-e?‘?-meconine absorbing in the deep UV region has been blended with `alternatinga€? and `semi-alternatinga€? and `high orthoa€? alternating novolak resins, based on e?‘?/e?‘?-cresol. The new photoresists have been evaluated as a negative tone deep UV photoresist for mircolithography.