PHOTORESIST COMPOSITION RESIN FOR DEEP UV EXPOSUE AND MANUFACTURING METHOD THEREOF AND PHOTORESIST COMPOSITION RESIN FOR DEEP UV EXPOSURE THEREWITH

摘要

BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a structural resin for ultraviolet photoresist composition for manufacturing a semiconductor device, a method of manufacturing the same, and a photoresist composition for ultraviolet exposure including the structural resin.;The present invention provides a norbornene-based resin as a structural resin for photoresist composition for far-ultraviolet exposure that can be exposed using ultraviolet rays as a light source in a photolithography process during the manufacturing of a semiconductor device. The manufacturing method of this and the photoresist composition for ultraviolet-ray exposure containing this norbornene-type resin are provided.;Therefore, there is an effect of providing a photoresist composition for far ultraviolet rays, which has sufficient transmittance even in about 193 nm ultraviolet ray, is excellent in etching resistance, is clear in pattern contrast during development, and exhibits high resolution.