Structure resin for photovoltaic composition for deep ultraviolet exposure for the manufacture of semiconductor devices, method for producing the same, and photoresist composition for deep ultraviolet ray exposure

摘要

The present invention relates to a structural resin for photovoltaic composition for deep ultraviolet exposure for the production of a semiconductor device, a method for producing the same, and a photoresist composition for deep ultraviolet exposure comprising the structural resin.;The present invention relates to a resin composition for a photoresist composition for deep ultraviolet exposure which can be exposed using deep ultraviolet rays as a light source in a photolithography process in the process for manufacturing a semiconductor device, which comprises a poly (di-tert-butyl-norbornene-dicarboxylate (Tert-butyl-norbornene-dicarboxylate) as a main chain, and a method for producing a resin using the poly (di-tert-butyl-Dicarboxylate) as a main chain. The present invention also provides a photoresist composition for deep-UV exposure.;Accordingly, there is an effect of providing a deep ultraviolet ray photoresist composition which has sufficient transparency even in the far ultraviolet ray of about 193 nm, is excellent in corrosion-resisting property, has a clear pattern contrast upon development, and exhibits high resolution.