A Surface Micromachined CMOS MEMS Humidity Sensor

摘要

This paper reports a CMOS MEMS (complementary metal oxide semiconductor micro electromechanical system) piezoresistive humidity sensor fabricated by a surface micromachining process. Both pre-CMOS and post-CMOS technologies were used to fabricate the piezoresistive humidity sensor. Compared with a bulk micromachined humidity sensor, the machining precision and the sizes of the surface micromachined humidity sensor were both improved. The package and test systems of the sensor were designed. According to the test results, the sensitivity of the sensor was 7 mV/%RH (relative humidity) and the linearity of the sensor was 1.9% at 20 °C. Both the sensitivity and linearity were not sensitive to the temperature but the curve of the output voltage shifted with the temperature. The hysteresis of the humidity sensor decreased from 3.2% RH to 1.9% RH as the temperature increased from 10 to 40 °C. The recovery time of the sensor was 85 s at room temperature (25 °C).