一种格栅状上电极的CMOS工艺聚酰亚胺电容型湿度传感器

摘要

报道了采用标准CMOS工艺制作的格栅型上电极的电容型湿度传感器,采用高分子材料聚酰亚胺作为感湿介质,铝作为金属电极.对该湿度传感器的器件结构、制作工艺和传感器特性,如灵敏度、湿滞以及响应时间等进行了讨论.测试结果表明,在12%～92%的湿度范围内,电容一相对湿度曲线具有良好的线性度,灵敏度为0.9 pF/RH,响应时间为5.5 s.%A grid-type upper electrode capacitive polyimide humidity sensor fabricated by standard CMOS process was reported. The humidity sensor uses polyimide thin film as humidity-sensitive layer, and aluminum as upper electrode and lower electrode. Details of device structure, fabrication process and sensor characteristics such as sensitivity,hysteresis ,and response time are discussed. Test results show that the capacitance-RH curves have reasonable linearity in the range of 12％ and 92％ ,the sensitivity is 0.9 pF/RH,and the response time is about 5.5 s.