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Effect of morphology on electron drift mobility in porousTiO2

机译:形态对多孔TiO2中电子漂移迁移率的影响

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Porous titanium dioxide is an attractive material for solar cell application on account of itsstability, electron transport properties, and the possibilities for controlling surface morphology as well asfor its ease of fabrication and low cost. NanostructuredTiO2has been intensively studied for applicationsto dye sensitised solar cells. The performance of the titanium dioxide based solar cells is influenced, amongother factors, by the electron mobility of the porous titanium dioxide. Different fabrication processes forporous titanium films result in different film morphology, which in turn affects the electron transport. Wehave employed three different techniques namely, electrostatic spray assisted vapour deposition (ESAVD),D.C. reactive sputtering, and doctor blading of sol-gel dispersions to deposit thinTiO2films onto indium tinoxide (ITO) coated glass substrates. All these films exhibited only the anatase phase as confirmed by X-raydiffraction analysis. Using the time-of-flight technique, the electron drift mobility in the porousTiO2films was measured. The results show that in the low field region (<55,000 Vcm?1) the mobility, in all the films, were in the range of10?7to10?6cm2Vs?1. The drift mobility in the films prepared by reactive sputteringwas consistently higher than in the films prepared by the two other techniques. Sputter deposited films hadlower porosity (~10% and 36% for normal-, and oblique (60°)-angle deposited films) compared to~50% for films deposited by the two other techniques. The relationship between the drift mobility and film morphologyis discussed with the aid of scanning electron microscopy studies.
机译:多孔二氧化钛由于其稳定性,电子传输特性,控制表面形态的可能性以及其易于制造和低成本而成为用于太阳能电池的有吸引力的材料。纳米结构的TiO2已被广泛研究用于染料敏化太阳能电池。除其他因素外,基于二氧化钛的太阳能电池的性能受多孔二氧化钛的电子迁移率影响。多孔钛膜的不同制造工艺会导致不同的膜形态,进而影响电子传输。我们采用了三种不同的技术,即静电喷雾辅助气相沉积(ESAVD),直流电。反应溅射,以及刮涂溶胶-凝胶分散体以将TiO2薄膜沉积到涂有氧化铟锡(ITO)的玻璃基板上。通过X射线衍射分析证实,所有这些膜仅表现出锐钛矿相。使用飞行时间技术,测量了多孔TiO2薄膜中的电子漂移迁移率。结果表明,在低场区(<55,000Vcm-1)中,所有膜的迁移率都在10-7-7-10cm6Vs-1范围内。通过反应溅射制备的膜中的漂移迁移率始终高于通过其他两种技术制备的膜中的漂移迁移率。溅射沉积的膜的孔隙率较低(法向和倾斜(60°)角沉积的膜的孔隙率分别为10%和36%),而其他两种技术沉积的膜的孔隙率则仅为50%。借助扫描电子显微镜研究讨论了漂移迁移率与薄膜形态之间的关系。

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