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HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED DRAIN CURRENT DRIFT AND/OR LEAKAGE CURRENT PERFORMANCE
HIGH ELECTRON MOBILITY TRANSISTORS HAVING IMPROVED DRAIN CURRENT DRIFT AND/OR LEAKAGE CURRENT PERFORMANCE
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机译:具有改进的漏极电流漂移和/或漏电流性能的高电子迁移率晶体管
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摘要
A high electron mobility transistor includes a channel layer, a barrier layer on the channel layer, source and drain contacts on the barrier layer, a gate contact between the source and drain contacts, and a multi-layer passivation structure on the upper surface of the barrier layer between the source contact and the drain contact. The multi-layer passivation structure includes a first passivation layer that comprises a charge dissipation material directly contacts the upper surface of the barrier layer and a second passivation layer comprising a different material than the first passivation layer that also directly contacts the upper surface of the barrier layer. In some embodiments, at least one recess may be formed in the upper surface of the barrier layer and the second passivation layer may be formed within the recesses.
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