...
首页> 外文期刊>Synthetic Metals >Density-functional theoretical study of fluorination effect on the electronic structure and electron drift mobilities of symmetric pentacene derivatives
【24h】

Density-functional theoretical study of fluorination effect on the electronic structure and electron drift mobilities of symmetric pentacene derivatives

机译:密度功能性理论研究氟化效应对称五苯衍生物的电子结构和电子漂移迁移率

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

A theoretical study using density functional theory is reported to gain insights how the side-specific symmetric fluorination of pentacene can change the geometry and the electronic structure of its neutral and mono-charged states. The commercial electric p- and n-type semiconductors, pentacene and perfluorinated pentacene, were selected as reference molecules. Depending on the substitution, the energies of the lowest unoccupied molecular orbitals (LUMOs) are changed from -2.92 eV to -3.92 eV. Comparing with the pentacene, the maximal hypsochromic shift of the optical bandgap can be reached by partial outermost substitution. On the other hand, the bathochromic shifts are predicted for the fluorination of inner rings. The potential role of intermolecular hydrogen H..F bonds stabilizing the crystal structure was estimated by mutual comparison of interaction energies for parallel-stacked and parallel-displaced dimer configurations. The drift mobilities were evaluated for the studied dimer configurations at the room temperature using the Marcus theory and the Einstein relation. The presented theoretical results indicate contradictory role of the fluorination in preparation of electric n-semiconductors. The increasing number of fluorine atoms improves the LUMO energy level but the dimer electron drift mobilities are decreased.
机译:据报道,使用密度函数理论的理论研究,以了解五烯烯的侧面特异性对称氟化可以改变其中立和单电荷状态的几何形状和电子结构。选择商业电气P和N型半导体,五烯和全氟化苯二烯烯作为参考分子。根据替代,最低未占用的分子轨道(LUMOS)的能量从-2.92 eV变为-3.92eV。与五链烯相比,可以通过部分最外层取代来达到光学带隙的最大低温偏移。另一方面,预测含有内圈的氟化的碱基偏移。分子间氢气H..f键合稳定晶体结构的潜在作用是通过相互堆叠和平行移位二聚体配置的相互作用能量进行互动能量来估算。使用Marcus理论和爱因斯坦关系评估了在室温下进行了研究的二聚体配置的漂移迁移率。呈现的理论结果表明氟化在制备电n半导体中的矛盾作用。越来越多的氟原子改善了LumO能量水平,但二聚体电子漂移迁移率降低。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号