Characterization and modeling of dual material double gate tunnel field effect transistor using superposition approximation method

摘要

Tunnel field effect transistors are used for ultra-low power application since it is challenging tooperate CMOS at very low supply voltage. As tunnel field effect transistor has a very low subthresholdslope due to band to band tunneling (BTBT) mechanism, it has the potential to operateat very low operating voltage. It is necessary that the devices utilized in implantable bio-medicalapplications and Internet of Everything (IoE) need to consume very lowpower. This work presentsan analysis of Dual Material Double Gate Tunnel Field effect transistor (DMDG-TFET). An analyticaltwo dimensional (2D)model has been developed to obtain the analytical expressions for draincurrent. The 2D Poisson's equation has been used to calculate surface potential in the siliconchannel using the superposition approximation, as it considers the short channel effects in thecalculation of the current when compared to parabolic approximation. To validate the model, analyticalresults have been confirmed by comparing with the Sentaurus TCAD simulation results.A reduced subthreshold slope of 31.2 mV/decade is obtained in this paper. It shows that DMDGTFET is a promising candidate for ultra-low power applications. The subthreshold swing obtainedusing superposition approximation is more optimized than that of parabolic approximationtechnique.