首页>
外国专利>
Independent and Different Work Fuction Double Gated electron-hole Bilayer Tunnel Field Effect Transistor and its Fabrication Method
Independent and Different Work Fuction Double Gated electron-hole Bilayer Tunnel Field Effect Transistor and its Fabrication Method
展开▼
机译:独立工作功双栅电子空穴双层隧道场效应晶体管及其制作方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
The present invention relates to an electron-hole bilayer tunnel field effect transistor having a symmetric PMOS and NMOS double gate structure and a fabrication method for the same. The electron-hole bilayer tunnel field effect transistor increases an operation current and a gradient under a threshold voltage by using a double gate p-i-n structure and tunneling between bands and reduces supply power by decreasing the threshold voltage which has a symmetric double gate structure which can be realized by a gate of a symmetric structure.
展开▼