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ELECTRONIC-HOLE DOUBLE LAYER TUNNEL FIELD EFFECT TRANSISTOR USING INDEPENDENT AND SYMMETRICAL DOUBLE GATE STRUCTURE HAVING VERTICAL STRUCTURE AND MANUFACTURING METHOD THEREOF
ELECTRONIC-HOLE DOUBLE LAYER TUNNEL FIELD EFFECT TRANSISTOR USING INDEPENDENT AND SYMMETRICAL DOUBLE GATE STRUCTURE HAVING VERTICAL STRUCTURE AND MANUFACTURING METHOD THEREOF
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机译:具有竖向结构的对称对称双门结构的电子双孔隧道场效应晶体管
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摘要
The present invention relates to an electronic-hole double layer tunnel field effect transistor, where a source region, a channel and a drain region are arranged at a substrate in a vertical direction, including a double gate structure. The present invention relates to the electronic-hole double layer tunnel field effect transistor and a manufacturing method thereof capable of increasing the degree of integration of the transistor at the substrate by having a vertical structure, being the electronic-hole double layer tunnel field effect transistor by applying different electrodes to the double gate structure, improving the inclination under threshold voltage and increasing operating current by using a double gate p-i-n structure and tunneling between bands, and having an implementable symmetrical double gate structure by proposing a gate of a symmetrical structure.;COPYRIGHT KIPO 2014
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