Integration and Boost of a Read-Modify-Write Module in Phase Change Memory System

摘要

Phase-change memory (PCM) is a non-volatile memory device with favorable characteristics such as persistence, byte-addressability, and lower latency when compared to flash memory. However, it comprises memory cells that have limited lifetime and higher access latency than DRAM. The row buffer size of a PCM is preferred to be larger than 128B to fill the latency gap between two memories and to reduce the metadata overhead incurred by wear leveling. As the cache line size in a general-purpose processor is 64B, a read-modify-write (RMW) module is required to be placed between the processor and the PCM, which in turn induces a performance degradation. To reduce such an overhead and enhance the reliability of a device, this paper presents a new RMW architecture. The proposed model introduces a DRAM cache in the RMW module, which minimizes redundant read operations for write operations by pre-fetching the entire transaction unit instead of merely caching the 64B requested data. Furthermore, a typeless merge operation is performed with the proposed cache by gathering multiple commands accessing consecutive addresses, irrespective of whether they are READ or WRITE. Simulation results indicate that the proposed method enhances the speed by 3.2 times and the reliability by 49 percent as compared to the baseline model.