首页> 外国专利> Circuits relating to the calculation of power consumption of phase change memory devices, phase change memory systems including the same, and methods relating to the calculation of power consumption of phase change memory devices

Circuits relating to the calculation of power consumption of phase change memory devices, phase change memory systems including the same, and methods relating to the calculation of power consumption of phase change memory devices

机译:与相变存储器件的功耗计算有关的电路,包括该相变存储器件的相变存储系统以及与相变存储器件的功耗计算有关的方法

摘要

A circuit for calculating power consumption of a phase change memory (PCM) device may be provided. The circuit may include a plurality of pipelines and an arithmetic logic circuit. The plurality of pipelines may be configured to correspond to a plurality of write periods exhibiting different power consumption values during a write operation of the PCM device executed by a write command. The plurality of pipelines may shift or transmit data in synchronization with a clock signal. The arithmetic logic circuit may be configured to perform an adding operation of all of deviations of the power consumption values at a point of time that data transmission between at least two of the plurality of pipelines occurs, to thus generate a total power consumption value.
机译:可以提供用于计算相变存储器(PCM)设备的功耗的电路。该电路可以包括多个管线和算术逻辑电路。多个流水线可以被配置为对应于在由写命令执行的PCM设备的写操作期间表现出不同功耗值的多个写时段。多个流水线可以与时钟信号同步地移位或传输数据。算术逻辑电路可以被配置为在多个流水线中的至少两个之间发生数据传输的时间点执行功耗值的所有偏差的加法运算,从而产生总功耗值。

著录项

  • 公开/公告号US10083103B1

    专利类型

  • 公开/公告日2018-09-25

    原文格式PDF

  • 申请/专利权人 SK HYNIX INC.;

    申请/专利号US201715823190

  • 发明设计人 JUNG HYUN KWON;SUNGEUN LEE;SANG GU JO;

    申请日2017-11-27

  • 分类号G11C7;G06F11/30;H01L27/24;G06F1/32;G11C13;H01L45;G11C7/10;

  • 国家 US

  • 入库时间 2022-08-21 13:05:40

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