机译:SUBHDIP:基于过程变化的亚阈值达林顿对基于阈值的NBTI传感器电路
Indian Inst Technol Indore Discipline Elect Engn Nanoscale Devices VLSI Circuit & Syst Design Lab Indore 453552 Madhya Pradesh India;
leakage currents; MOSFET; semiconductor device reliability; VLSI; negative bias temperature instability; process variation; high-performance integrated circuits; vertical oxide field; high-input impedance; temperature variation; temporal degradation; room temperature; negative bias temperature instability; subthreshold Darlington pair; NBTI degradation sensor; nanoscale very-large-scale integration; NBTI sensor circuit; high-speed integrated circuits; P-channel MOS transistors; SUBHDIP; leakage current; current 30; 0 nA; temperature 293 K to 298 K;
机译:稳定和可靠电路的工艺变化和NBTI弹性施密特触发器
机译:技术规模效应对NBTI的相对影响以及工艺变化对数字电路可靠性的影响
机译:NBTI和工艺偏差补偿电路采用自适应偏置
机译:基于达林顿阈值的基于阈值的NBTI传感器,用于可靠的CMOS电路
机译:纳米CMOS技术的耐变化电路设计:电路和架构协同设计
机译:受生物启发的偏振成像传感器:从电路和光学到信号处理算法和生物医学应用
机译:存在工艺变化的NBTI容忍微体系结构设计
机译:用于高级si辐射耐受集成电路的薄外延CaF2介电膜的快速等温加工