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NBTI and Process Variations Compensation Circuits Using Adaptive Body Bias

机译:NBTI和工艺偏差补偿电路采用自适应偏置

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摘要

Reliability and variability have become big design challenges facing submicrometer high-speed applications and microprocessors designers. A low area overhead adaptive body bias (ABB) circuit is proposed in this paper to compensate for negative-bias temperature instability (NBTI) aging and process variations to improve the system reliability and yield. The proposed ABB circuit consists of a threshold voltage-sensing circuit and an on-chip analog controller. In this paper, post-layout simulation results, referring to an industrial hardware-calibrated STMicroelectronics 65-nm CMOS technology transistor model, are presented. The transistor model contains process variations and NBTI aging model cards, which are declared by STMicroelectronics to be Silicon verified. Cadence RelXpert, Virtuoso Spectre, and Virtuoso UltraSim tools are used to estimate the NBTI aging and process variations impacts on a circuit block case study, extracted from a real microprocessor critical path. These results show that the proposed ABB compensates effectively for NBTI aging and process variations. For example, the proposed ABB improves the timing yield from 74.4% to 99.7% at zero aging time and from 36.6% to 97.1% at 10 years aging time. In addition, the proposed ABB increases the total yield from 67% to 99.5% at zero aging time and from 35.9% to 97.1% at 10 years aging time.
机译:可靠性和可变性已成为亚微米高速应用和微处理器设计人员面临的重大设计挑战。本文提出了一种低面积的架空自适应主体偏置(ABB)电路,以补偿负偏置温度不稳定性(NBTI)老化和工艺变化,从而提高系统可靠性和良率。拟议的ABB电路由一个阈值电压检测电路和一个片上模拟控制器组成。本文介绍了布局后的仿真结果,并参考了经过工业硬件校准的意法半导体(STMicroelectronics)的65 nm CMOS技术晶体管模型。晶体管模型包含工艺变化和NBTI老化模型卡,STMicroelectronics声明它们经硅验证。 Cadence RelXpert,Virtuoso Spectre和Virtuoso UltraSim工具用于估计NBTI老化和工艺变化对从实际微处理器关键路径提取的电路块案例研究的影响。这些结果表明,提出的ABB有效补偿了NBTI老化和工艺变化。例如,提出的ABB在零老化时间下将时序良率从74.4%提高到99.7%,在10年老化时间下从36.6%提高到97.1%。此外,拟议的ABB在零老化时间将总产率从67%提高到99.5%,在10年老化时间将从35.9%提高到97.1%。

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