Subthreshold CMOS voltage reference circuit with body bias compensation for process variation

摘要

This study presents a subthreshold complementary metal oxide semiconductor (CMOS) voltage reference circuit that adopts dynamical body bias to compensate the process-related reference voltage fluctuation. The proposed circuit generates a mean reference voltage of 0.781 V at 1.2 V supply and 27u000b0;C, reduces the standard deviation (<3;) of the reference voltage from 11 mV to only 3 mV, and meanwhile improves the power supply rejection ratio from -30.7 to -51.4 dB. The average temperature coefficient measured from 0 to 100u000b0;C is 48 ppm/u000b0;C, and the line regulation is 0.34%/V in a supply voltage ranging from 1.2 to 2.3 V. The maximum supply current is 8.1 ;C;A at 1.2 V supply and 100u000b0;C, and the chip area is 0.0533 mm(sup)2(/sup) in 0.13-;C;m CMOS technology.