Discipline of Electrical Engineering, Indian Institute of Technology, Indore (M.P.)-453552, India;
Discipline of Electrical Engineering, Indian Institute of Technology, Indore (M.P.)-453552, India;
Discipline of Electrical Engineering, Indian Institute of Technology, Indore (M.P.)-453552, India;
Discipline of Electrical Engineering, Indian Institute of Technology, Indore (M.P.)-453552, India;
Negative bias temperature instability; Thermal variables control; Sensitivity; Degradation; Reliability; Mathematical model; Impedance;
机译:SUBHDIP:基于过程变化的亚阈值达林顿对基于阈值的NBTI传感器电路
机译:通过模拟T开关(AT-Switch)和超级截止CMOS(SCCMOS)管理具有低V {sub}(TH)晶体管的基于电荷的模拟电路中的亚阈值泄漏
机译:具有亚阈值CMOS电路的低功耗唤醒接收器,用于无线传感器网络
机译:基于SubThreShold Darlington基对CMOS电路的NBTI传感器
机译:用于微针葡萄糖传感器的基于CMOS开关电容器的电流表读出电路。
机译:基于等效电路模型的亚阈值区域CMOS太赫兹等离子体检测器的准静态分析
机译:具有亚阈值CMOS电路的低功耗唤醒接收器,用于无线传感器网络