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Warpage Prediction and Experiments of Fan-Out Waferlevel Package During Encapsulation Process

机译:封装过程中扇出晶圆级封装的翘曲预测和实验

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A waferlevel package (WLP) that has a flipchip form and uses thin-film redistribution with solder bumps to connect the package to the printed wiring board directly is discussed in this paper. A liquid molding compound is used for the encapsulation process. Since the thickness of the fan-out WLP is smaller than that in a traditional integrated circuit (IC) package, the fan-out WLP induces more serious warpage. Warpage plays an important role during the IC encapsulation process, and too large a warpage would not let the package proceed to the next manufacturing process. This paper uses an approach that considers both cure- and thermal-induced shrinkages during the encapsulation process to predict the amount of warpage. Cure-induced shrinkage is described by the pressure–volume–temperature–cure (PVTC) equation of the liquid compound. The thermally induced shrinkage is described by the coefficients of thermal expansion of the component materials. The liquid compound properties are obtained by various techniques, such as cure kinetics by differential scanning calorimetry- and cure-induced shrinkage by a PVTC testing machine. These experimental data are used to formulate the PVTC equation. A fan-out WLP is first simulated, and the simulation results are verified with experiments. It is shown that an approach that considers both thermal and cure/compressibility effects can better predict the amount of warpage for the fan-out WLP. The PVTC equation is successfully implemented, and it is verified that warpage is governed by both thermal and cure shrinkages. The amount of warpage after molding could be accurately predicted with this methodology. Simulation results show that cure shrinkage of the liquid compound is the dominant factor responsible for package warpage after encapsulation.
机译:本文讨论了一种晶圆级封装(WLP),该封装具有倒装芯片形式,并使用带有焊料凸点的薄膜重新分布将封装直接连接到印刷电路板。液体模塑料用于封装过程。由于扇出WLP的厚度小于传统集成电路(IC)封装的厚度,因此扇出WLP会引起更严重的翘曲。翘曲在IC封装过程中起着重要作用,翘曲太大不会使封装继续进行下一个制造过程。本文采用一种在封装过程中同时考虑固化和热收缩的方法来预测翘曲量。固化引起的收缩由液体化合物的压力-体积-温度-固化(PVTC)方程描述。热引起的收缩通过组成材料的热膨胀系数来描述。可以通过各种技术获得液体化合物的特性,例如通过差示扫描量热法进行固化动力学以及通过PVTC测试机进行固化引起的收缩。这些实验数据用于公式化PVTC方程。首先对扇出WLP进行仿真,并通过实验验证仿真结果。结果表明,同时考虑热效应和固化/压缩性效应的方法可以更好地预测扇出WLP的翘曲量。 PVTC方程已成功实现,并且验证了翘曲受热收缩率和固化收缩率支配。用这种方法可以准确地预测成型后的翘曲量。仿真结果表明,液体化合物的固化收缩率是封装后封装翘曲的主要因素。

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