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首页> 外文期刊>Components, Packaging and Manufacturing Technology, IEEE Transactions on >Warpage Prediction and Optimization for Embedded Silicon Fan-Out Wafer-Level Packaging Based on an Extended Theoretical Model
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Warpage Prediction and Optimization for Embedded Silicon Fan-Out Wafer-Level Packaging Based on an Extended Theoretical Model

机译:基于扩展理论模型的嵌入式硅扇出晶圆级封装翘曲预测与优化

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摘要

The fan-out package is designed to provide increased I/O density within a reduced form factor at a lower cost, as well as good electrical performance and heterogeneous integration capabilities, which has gained significant attention in recent years. However, warpage control during manufacturing process is a key character for fan-out packages. This paper focuses on the warpage prediction and optimization of embedded silicon fan-out (eSiFO) wafer-level package. An extended theoretical calculation model is applied and demonstrated, and the effects of various parameters on warpage were analyzed for optimization. By comparison with the experimental results, the finite-element modeling (FEM) simulation results and classic bimaterial model, the proposed extended theoretical calculation model is proven to be simple, fast, and effective for eSiFO wafer-level package. The effects of process steps, structural parameters, and material parameters were studied based on the extended theoretical model, and some advice on reducing warpage was given in the end. This paper offers an insight work for the warpage study of other embedded and fan-out packages.
机译:扇出封装设计用于以较低的成本以减小的外形尺寸提供增加的I / O密度,以及良好的电气性能和异构集成能力,这在近年来引起了广泛关注。但是,制造过程中的翘曲控制是扇出封装的关键特征。本文着重于嵌入式硅扇出(eSiFO)晶圆级封装的翘曲预测和优化。应用并论证了扩展的理论计算模型,并分析了各种参数对翘曲的影响,以进行优化。通过与实验结果,有限元建模(FEM)仿真结果和经典双材料模型进行比较,所提出的扩展理论计算模型被证明对eSiFO晶圆级封装简单,快速且有效。在扩展的理论模型的基础上研究了工艺步骤,结构参数和材料参数的影响,最后提出了减少翘曲的建议。本文为其他嵌入式和扇出封装的翘曲研究提供了有见地的工作。

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