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Using Cross-Linked SU-8 to Flip-Chip Bond, Assemble, and Package MEMS Devices

机译:使用交叉链接的SU-8进行倒装芯片键合,组装和封装MEMS器件

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摘要

This paper investigates using an SU-8 photoresist as an adhesive material for flip-chip bonding, assembling, and packaging microelectromechanical systems devices. An important factor, when using SU-8 as an adhesive material is to control ultraviolet (UV) exposure during fabrication to maximize bond strength due to material cross linking. This approach is much improved over previous efforts where SU-8 bake times and temperatures where changed to alter material cross-linking. In this paper, bake times and temperatures were maintained constant and total UV exposure energy was varied. Once fabricated, bond strength was systematically tested to determine the tensile loads needed to separate bonded structures. The resulting separation force was shown to increase with UV exposure and ranged from 0.25 (5-s exposure) to 1.25 N (15-s exposure). The separation test data were then analyzed to determine the statistical significance of varying UV exposure time and its effect on SU-8 cross-linking and bond strength. The data show that total UV exposure dose is directly correlated with the bond strength of SU-8 bonded structures. By varying only UV dose, the separation force data exhibited a statistically significant dependence on SU-8 cross linking with a 5% probability of error. Further, SU-8 etch resiliency increased by approximately 40%–60% as cross linking was increased with UV exposures ranging from 5 to 15 s.
机译:本文研究使用SU-8光刻胶作为倒装芯片键合,组装和封装微机电系统器件的粘合材料。当使用SU-8作为粘合材料时,一个重要因素是在制造过程中控制紫外线(UV)的暴露,以使由于材料交联而产生的粘合强度最大化。这种方法比以前的工作有了很大的改进,在以前的工作中,SU-8的烘烤时间和温度发生了变化,从而改变了材料的交联度。在本文中,烘烤时间和温度保持恒定,并且总的紫外线照射能量有所变化。制成后,将对粘结强度进行系统测试,以确定分离粘结结构所需的拉伸载荷。结果表明,分离力随紫外线暴露而增加,范围从0.25(5s暴露)到1.25 N(15s暴露)。然后分析分离测试数据,以确定变化的紫外线暴露时间及其对SU-8交联和结合强度的影响的统计学意义。数据表明,总的紫外线暴露剂量与SU-8键合结构的键合强度直接相关。通过仅改变紫外线剂量,分离力数据显示出对SU-8交联的统计学显着依赖性,错误概率为5%。此外,随着UV暴露时间为5到15 s,交联增加,SU-8蚀刻的回弹性提高了大约40%–60%。

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