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TLP ESD Testing of Electronic Components

机译:电子元器件的TLP ESD测试

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This article presents some guidance for selecting an appropriate o-scope for TLP measurements. It also points out that the apparently simple question as to which o-scope is most suitable does not have a simple answer. There are three distinct TLP measurements: the measurement of the DUT's Ⅰ-Ⅴ and leakage (IVL) data, the Ⅰ-Ⅴ data measurement for the SOLZ/SORZ verification data, and the waveform data for the calibration and verification of the TLP tester rise times. The new TLP document addresses the bandwidth of the scope for IVL data collection and for SORZ data, but it does not specif-ically address the rise time measurement and the associated error issue. Fortunately, the 500 MHz bandwidth is sufficient to measure rise times down to 2 nanoseconds. However, this bandwidth is inadequate to measure any rise time below 1 nanosecond (see Table Ⅰ) because the errors at this level are above the acceptable limits. The rise time is important for devices that are sensitive to ΔW/ΔT or /ΔT changes. The duplicating of HBM behavior requires 2-10 nanoseconds per the TLP standard, but engineering development may actually require <2 nanoseconds T_r. Data do exist that show changes and differences for Tr <5 nanoseconds for both HBM testing and TLP testing. Therefore, it is important that the o-scope used to measure the rise time parameter have sufficient bandwidth to ensure that the errors in the measurements are at an acceptable minimum level.
机译:本文为选择合适的OLP显微镜进行TLP测量提供了一些指导。它还指出,关于哪个o-scope最合适的看似简单的问题没有一个简单的答案。 TLP测量分为三种:DUT的Ⅰ-Ⅴ和泄漏(IVL)数据的测量,SOLZ / SORZ验证数据的Ⅰ-Ⅴ数据测量,以及TLP测试仪的校准和验证的波形数据上升次。新的TLP文档解决了IVL数据收集和SORZ数据范围的带宽问题,但没有具体解决上升时间测量和相关的错误问题。幸运的是,500 MHz带宽足以测量低至2纳秒的上升时间。但是,该带宽不足以测量1纳秒以下的任何上升时间(请参见表Ⅰ),因为在该水平的误差高于可接受的极限。对于对ΔW/ΔT或or /ΔT变化敏感的器件,上升时间很重要。根据TLP标准,HBM行为的复制需要2-10纳秒,但是工程开发实际上可能需要<2纳秒的T_r。确实存在显示HBM测试和TLP测试的Tr <5纳秒变化和差异的数据。因此,重要的是用于测量上升时间参数的o镜必须具有足够的带宽,以确保测量中的误差处于可接受的最小水平。

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