A Sub-100 ppm/degrees C Temperature-Compensated High-Frequency CMOS Relaxation Oscillator

摘要

A temperature-compensated high-frequency CMOS integrated relaxation oscillator with low frequency variations is presented. A current-controlled oscillator topology is employed with a resistive source-degenerated transconductor and a current comparator to achieve high oscillation frequency and low power dissipation. The proposed oscillator was designed with process parameters from a standard 0.35-m CMOS technology and a 2.5-V single power supply voltage. At a nominal oscillation frequency of 21 MHz, the total power dissipation of the circuit was 201 W. Post-layout simulation results showed that the frequency variations were less than over a temperature range of to 120 degrees C.