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首页> 外文期刊>Analog Integrated Circuits and Signal Processing >A design of +/- 0.28ppm temperature-compensated crystal oscillator in a 0.35m CMOS process
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A design of +/- 0.28ppm temperature-compensated crystal oscillator in a 0.35m CMOS process

机译:0.35M CMOS工艺中的+/- 0.28ppm温度补偿晶体振荡器的设计

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摘要

A high-performance temperature-compensated crystal oscillator (TCXO) is presented. This paper proposes a new temperature sensor with a sigma- analog to digital converter, and a voltage-controlled crystal oscillator, respectively, using two sets of independent power supply. The presented TCXO is implemented in a 0.35m 2P3M standard complementary metal-oxide semiconductor process at a power supply of 3.3V, and the total power dissipation is 21mW. Measurement results indicate that the designed TCXO achieves +/- 16ppm output frequency tuning range and 135, -141dBc/Hz phase noise at 1, 10kHz frequency offset, respectively, by using a 40MHz fundamental AT-cut crystal resonator. With the temperature compensation, the frequency deviation is within +/- 0.28ppm over -40 degrees C to 85 degrees C.
机译:提出了一种高性能温度补偿的晶体振荡器(TCXO)。 本文采用了具有SIGMA-模数转换器的新型温度传感器,以及使用两组独立电源的电压控制的晶体振荡器。 所提出的TCXO在3.3V的电源下以0.35M 2P3M标准的互补金属氧化物半导体工艺实施,总功耗为21MW。 测量结果表明,通过使用40MHz基本的晶体谐振器,设计的TCXO分别在1,10kHz频率偏移时实现+/- 16PPM输出频率调谐范围和135,-141dBc / Hz相位噪声。 随着温度补偿,频率偏差超过-40度C至85摄氏度内的+/- 0.28ppm。

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