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A differential coupled frequency doubling voltage-controlled crystal oscillator in a 0.35 mu m CMOS process

机译:0.35μmCMOS工艺中的差分耦合倍频压控晶体振荡器

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This paper presents a high-performance differential coupled frequency doubling voltage-controlled crystal oscillator (VCXO). Frequency doubling and low phase noise are realized through a novel g(m)-boosted differential Colpitts oscillator. Distributed varactor arrays are used to obtain wide frequency tuning range and high tuning linearity simultaneously. The proposed VCXO is fabricated in a 0.35 mu m 2P3M standard complementary metal-oxide semiconductor process at a supply voltage of 3.3 V, and the power dissipation is 7 mW. Measurement results show that the designed VCXO achieves +/- 135 ppm output frequency variation range with 5 % linearity and -133 dBc/Hz phase noise at 1 kHz frequency offset by using a 40 MHz fundamental AT-cut crystal resonator.
机译:本文提出了一种高性能差分耦合倍频压控晶体振荡器(VCXO)。通过新型g(m)增强型差分Colpitts振荡器可实现倍频和低相位噪声。分布式变容二极管阵列可用于同时获得宽频率调谐范围和高调谐线性度。拟议的VCXO采用0.35μm2P3M标准互补金属氧化物半导体工艺制造,电源电压为3.3 V,功耗为7 mW。测量结果表明,通过使用40 MHz基本AT切割晶体谐振器,所设计的VCXO可实现+/- 135 ppm的输出频率变化范围和5%的线性度和-133 dBc / Hz的相位噪声(在1 kHz频偏下)。

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