A Temperature and Process Compensated Ultralow-Voltage Rectifier in Standard Threshold CMOS for Energy-Harvesting Applications

摘要

This brief presents an ultralow-voltage multistage rectifier built with standard threshold CMOS for energy-harvesting applications. A threshold-compensated diode (TCD) is developed to minimize the forward voltage drop while maintaining low reverse leakage flow. In addition, an interstage compensation scheme is proposed that enables efficient power conversion at input amplitudes below the diode threshold. The new rectifier also features an inherent temperature and process compensation mechanism, which is achieved by precisely tracking the diode threshold by an auxiliary dummy. Although the design is optimized for an ac input at 13.56 MHz, the presented enhancement techniques are also applicable for low- or ultrahigh-frequency energy scavengers. The rectifier prototype is fabricated in a 0.35-$muhbox{m}$ four-metal two-poly standard CMOS process with the worst-case threshold voltage of 600 mV/$-$ 780 mV for nMOS/pMOS, respectively. With a 13.56 MHz input of a 500 mV amplitude, the rectifier is able to deliver more than 35 $muhbox{W}$ at 2.5 V $V_{DD}$, and the measured deviation in the output voltage is as low as 180 mV over 100 $^{circ}hbox{C}$ for a cascade of ten TCDs.