首页> 美国卫生研究院文献>Sensors (Basel Switzerland) >A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

【2h】

A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

机译：用于微机械陀螺仪的标准CMOS工艺中的调节温度不敏感高压电荷泵

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
相似文献
相关主题

著录项

期刊名称 Sensors (Basel Switzerland)
作者
Xiang Li; Rui Li; Chunge Ju; Bo Hou; Qi Wei; Bin Zhou; Zhiyong Chen; Rong Zhang;
展开▼
作者单位

展开▼
年(卷),期 2019(19),19
年度 2019
页码 -1
总页数 11
原文格式 PDF
正文语种
中图分类
关键词
high-voltage generation; regulated charge pump; temperature-insensitive; triple-well NMOS transistor; standard CMOS process;

机译：高电压产生;调节电荷泵;温度不敏感;三阱NMOS晶体管;标准CMOS工艺;

相似文献

外文文献
中文文献
专利

1. An Efficient, Wide-Output, High-Voltage Charge Pump With a Stage Selection Circuit Realized in a Low-Voltage CMOS Process [J] . Zhicong Luo, Li-Chin Yu, Ming-Dou Ker Circuits and Systems I: Regular Papers, IEEE Transactions on . 2019,第9期

机译：具有通过低压CMOS工艺实现的级选择电路的高效，宽输出，高压电荷泵
2. An Efficient, Wide-Output, High-Voltage Charge Pump With a Stage Selection Circuit Realized in a Low-Voltage CMOS Process [J] . Zhicong Luo, Li-Chin Yu, Ming-Dou Ker Circuits and Systems I: Regular Papers, IEEE Transactions on . 2019,第9期

机译：具有通过低压CMOS工艺实现的级选择电路的高效，宽输出，高压电荷泵
3. A 190 mV start-up and 59.2% efficiency CMOS gate boosting voltage doubler charge pump in 0.18 urn standard CMOS process for energy harvesting [J] . Yoshida Minori, Miyaji Kousuke Japanese journal of applied physics . 2018,第4S期

机译：190 mV启动和效率为59.2％的CMOS栅极升压倍压电荷泵，采用0.18 urn标准CMOS工艺进行能量收集
4. Fully-integrated PMOS-based charge pumps in standard CMOS process without high-voltage switches [C] . Liu Jingqi, Bazzini Andrea, Gregori Stefano 2012 25th IEEE Canadian Conference on Electrical amp; Computer Engineering. . 2012

机译：采用标准CMOS工艺的完全集成的基于PMOS的电荷泵，无需高压开关
5. A Charge Pump Architecture with High Power-Efficiency and Low Output Ripple Noise in 0.5 mum CMOS Process Technology. [D] . Modi, Primit. 2012

机译：采用0.5 um CMOS工艺技术的具有高功率效率和低输出纹波噪声的电荷泵架构。
6. Modeling and Manufacturing of a Micromachined Magnetic Sensor Using the CMOS Process without Any Post-Process [O] . Jian-Zhi Tseng, Chyan-Chyi Wu, Ching-Liang Dai 2014

机译：使用CMOS工艺的微机械磁传感器的建模和制造无需任何后处理
7. A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes [O] . Xiang Li, Rui Li, Chunge Ju, 2019

机译：用于微机械陀螺标准CMOS工艺中的调节温度不敏感的高压电荷泵

A Regulated Temperature-Insensitive High-Voltage Charge Pump in Standard CMOS Process for Micromachined Gyroscopes

著录项

相似文献

相关主题

期刊订阅