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All-Digital Fast-Locking Delay-Locked Loop Using a Cyclic-Locking Loop for DRAM

机译:使用用于DRAM的循环锁定环的全数字快速锁定延迟锁定环

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摘要

A fast-locking all-digital delay-locked loop (DLL) with closed-loop duty-cycle correction (DCC) capability is proposed for clock synchronization in DRAM. A new cyclic-locking loop is proposed to resolve the locking speed degradation due to the replica delay line (RDL) in the DLL. The proposed cyclic-locking loop operates asynchronously and offers an optimal loop delay for DLL locking. The locking time of the proposed DLL is decreased by more than 34.1% compared to that of previous fast-locking DLLs using a successive approximation register algorithm. The proposed DLL is fabricated using 65-nm CMOS process technology on an active area of and uses a 1.1-V supply voltage. The operating frequency range is 400–800 MHz, and 3.52 mW is consumed at 800 MHz, resulting in a power consumption of 4.4 pJ/Hz. The measured locking time ranges from 38 to 41 cycles over the entire operating frequency range.
机译:提出了一种具有闭环占空比校正(DCC)功能的快速锁定全数字延迟锁定环(DLL),用于DRAM中的时钟同步。提出了一种新的循环锁定循环来解决由于DLL中的复制延迟线(RDL)而导致的锁定速度降低。所提出的循环锁定循环异步运行,并为DLL锁定提供了最佳的循环延迟。与使用逐次逼近寄存器算法的先前快速锁定DLL相比,所提出的DLL的锁定时间减少了34.1%以上。所建议的DLL是在有源区域上使用65nm CMOS工艺技术制造的,并使用1.1V电源电压。工作频率范围为400–800 MHz,在800 MHz时消耗3.52 mW,导致功耗为4.4 pJ / Hz。在整个工作频率范围内,测得的锁定时间范围为38至41个周期。

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