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Self-aligned flat ultra-thin chip package for flexible circuits

机译:自对准扁平超薄芯片封装,用于柔性电路

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Purpose - Ultra-thin chip packaging (UTCP) is one of the flexible assembly technologies, by which thinned dies are encapsulated inside spin-coated dielectric films. For sake of higher density integration and bending stress suppression, two UTCPs can be stacked vertically. The purpose of this paper is to present an improved UTCP process flow to embed thinned chip in a symmetric dielectric sandwich for a flat topography. The UTCP flat top surface is suitable for metallization and further 3D stacking. Design/methodology/approach - In the new process, a central photosensitive polyimide film is introduced, in which a cavity is made for the embedded chip. The cavity is defined by lithography using the chip itself as a photo-mask. In this way, the cavity size and position is self-aligned to the chip. The chip thickness is compensated by the surrounding central layer, and a UTCP with flat topography (flat UTCP) is realized after top dielectric deposition. Findings - A batch of daisy chain test vehicles was produced. The feasibility of the process flow is verified by optical and electrical measurements. The result shows 100 percent yield, which is much better than previous work. A thermal humidity test showed no significant degradation of the flat UTCPs after 1,000 hours. Originality/value - High yield fabrication of flat UTCP is first shown. An innovative self-alignment lithography step is introduced to make a cavity in dielectric for chip thickness compensation by using the chip itself as a photo-mask.
机译:目的-超薄芯片封装(UTCP)是一种灵活的组装技术,通过这种技术,可以将薄的芯片封装在旋涂电介质膜内。为了实现更高的密度集成和弯曲应力抑制,可以将两个UTCP垂直堆叠。本文的目的是提出一种改进的UTCP工艺流程,以将变薄的芯片嵌入对称的电介质夹层中以形成平坦的形貌。 UTCP平顶表面适用于金属化和进一步的3D堆叠。设计/方法/方法-在新工艺中,引入了中央感光性聚酰亚胺膜,其中为嵌入式芯片制作了空腔。通过使用芯片本身作为光掩模的光刻技术来定义空腔。以此方式,腔的尺寸和位置与芯片自对准。芯片厚度由周围的中心层补偿,并且在顶部电介质沉积之后实现具有平坦外形的UTCP(平坦UTCP)。调查结果-生产了一批菊花链测试车。工艺流程的可行性通过光学和电气测量得到验证。结果显示出100%的产量,这比以前的工作要好得多。热湿测试表明,在1,000小时后,平坦的UTCP没有明显的降解。创意/价值-首次展示了扁平UTCP的高产量制造。引入了创新的自对准光刻步骤,以通过使用芯片本身作为光掩膜在电介质中制造空腔以补偿芯片厚度。

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