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Effect of low temperature vulcanization time on the structure and optical properties of ZnS thin films

机译:低温硫化时间对ZnS薄膜结构和光学性能的影响

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The ZnS films were prepared by vulcanizing the sputtered Zn films at 440 degrees C for different vulcanization time. The crystal structure, surface morphology, microscopic defects and optical properties of the samples were measured by XRD, SEM, slow positron beam Doppler broadening spectroscopy and UV-visible spectrophotometer, respectively. The results show that the vulcanization time has significant effect on the crystallinity and optical properties of the samples. As the vulcanization time increases, the crystallinity of the samples will be improved. But excessive vulcanization time makes the sample crystallinity weak. The transmittance of all samples in the visible range is above 60%. The crystallinity of the sample after 6 h vulcanization is the best, and the band gap value is also up to 3.49 eV. The samples form hexagonal ZnS, whose surface free energy is the lower. The effect of grain specific surface area and S vapor atmosphere on grain growth is also discussed. The slow-positron beam Doppler broadening test results intuitively reveal the changes of microscopic defects in the ZnS film, which are consistent with the results of XRD and SEM analysis.
机译:ZnS薄膜是通过在440摄氏度下将溅射的Zn薄膜硫化不同的硫化时间而制备的。分别通过X射线衍射,扫描电镜,慢正电子束多普勒增宽光谱和紫外可见分光光度计测量了样品的晶体结构,表面形态,微观缺陷和光学性能。结果表明,硫化时间对样品的结晶度和光学性能有重要影响。随着硫化时间的增加,样品的结晶度将得到改善。但是过度的硫化时间会使样品的结晶度变弱。可见光范围内所有样品的透射率均在60%以上。硫化6 h后样品的结晶度最好,带隙值也高达3.49 eV。样品形成六角形的ZnS,其表面自由能较低。还讨论了晶粒比表面积和S蒸气气氛对晶粒生长的影响。慢正电子束多普勒增宽测试结果直观地揭示了ZnS膜中微观缺陷的变化,这与XRD和SEM分析的结果一致。

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