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首页> 外文期刊>Applied Surface Science >Deposition of indium tin oxide films on polycarbonate substrates by direct metal ion beam deposition
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Deposition of indium tin oxide films on polycarbonate substrates by direct metal ion beam deposition

机译:通过直接金属离子束沉积在聚碳酸酯基板上沉积铟锡氧化物膜

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Thin indium tin oxide (ITO) films have been deposited onto polycarbonate (PC) substrate without substrate heating by direct metal ion beam deposition (DMIBD) technique and the influence of secondary negative metal ion beam energy on the opto-electrical and surface morphological property of the films have been investigated. For ITO films (100 nm thick) deposited at ion beam energy of 50 eV, the lowest resistivity and the highest optical transmittance was obtained but when using higher ion beam energy (above 75 eV) both conductivity and optical transmittance were decreased. Surface roughness of as deposited ITO thin film at 50 eV is less than that of the bare PC substrate. However, too intense ion beam bombardment on growing film deteriorated the opto-electrical property of ITO films. XPS measurements showed that ITO films grown at 50 eV were fully oxidized and Cs 3d(5) peak is also observed. In this study, by using DMIBD technique we were able to obtain ITO films on PC substrate with 5 x 10(-4) Omega cm and above 90% optical transmittance at 550 nm. (C) 2003 Published by Elsevier Science B.V. [References: 21]
机译:通过直接金属离子束沉积(DMIBD)技术,在不加热衬底的情况下,将铟锡氧化物(ITO)薄膜沉积到了聚碳酸酯(PC)衬底上,并且二次负金属离子束能量对薄膜的光电和表面形态特性的影响电影已经过调查。对于以50 eV的离子束能量沉积的ITO膜(100 nm厚),获得了最低的电阻率和最高的光透射率,但是当使用更高的离子束能量(高于75 eV)时,电导率和光透射率都降低了。沉积的ITO薄膜在50 eV时的表面粗糙度小于裸PC基板的表面粗糙度。然而,在生长膜上过强的离子束轰击破坏了ITO膜的光电性能。 XPS测量表明,在50 eV处生长的ITO膜被完全氧化,并且还观察到Cs 3d(5)峰。在这项研究中,通过使用DMIBD技术,我们能够在PC基板上获得ITO膜,该膜的厚度为5 x 10(-4)Ωcm,在550 nm处具有90%以上的光学透射率。 (C)2003年由Elsevier Science B.V.出版[参考文献:21]

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