首页> 外国专利> Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate

Method for the formation of an indium oxide film by electrodeposition process or electroless deposition process, a substrate provided with the indium oxide film for a semiconductor element, and a semiconductor element provided with the substrate

机译:通过电沉积工艺或化学沉积工艺形成氧化铟膜的方法,设置有用于半导体元件的氧化铟膜的基板以及设置有该基板的半导体元件

摘要

A method for forming an indium oxide film on an electrically conductive substrate by immersing the substrate and a counter electrode in an aqueous solution containing at least nitrate and indium ions and flowing an electric current between the substrate and the couter electrode, thereby causing indium oxide film formation on the substrate, is provided. A substrate for a semiconductor element and a photovoltaic element produced using the film forming method are also provided. An aqueous solution for the formation of an indium oxide film by an electroless deposition process, containing at least nitrate and indium ions and tartrate, is also disclosed. A film-forming method for the formation of an indium oxide film on a substrate by an electroless deposition process, using the aqueous solution, and a substrate for a semiconductor element and a photovoltaic element produced using the film- forming method are further provided.
机译:一种通过在导电基板上形成氧化铟膜的方法,方法是将基板和对电极浸入至少包含硝酸盐和铟离子的水溶液中,并使电流在基板与对电极之间流动,从而形成氧化铟膜提供在基板上的形成。还提供了使用膜形成方法生产的用于半导体元件的基板和光伏元件。还公开了一种用于通过无电沉积工艺形成氧化铟膜的水溶液,其至少包含硝酸根和铟离子以及酒石酸盐。还提供了用于使用水溶液通过无电沉积工艺在基板上形成氧化铟膜的成膜方法,以及使用该成膜方法制造的用于半导体元件和光伏元件的基板。

著录项

  • 公开/公告号US6110347A

    专利类型

  • 公开/公告日2000-08-29

    原文格式PDF

  • 申请/专利权人 CANON KABUSHIKI KASHIA;

    申请/专利号US19980172774

  • 发明设计人 YUKIKO IWASAKI;KATSUMI NAKAGAWA;KOZO ARAO;

    申请日1998-10-15

  • 分类号C25D9/00;C25D9/04;C25D9/10;B05D1/18;

  • 国家 US

  • 入库时间 2022-08-22 01:36:19

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