首页> 外国专利> A METHOD FOR THE FORMATION OF AN INDIUM OXIDE FILM BY ELECTRO DEPOSITION PROCESS OR ELECTROLESS DEPOSITION PROCESS, A SUBSTRATE PROVIDED WITH SAID INDIUM OXIDE FILM FOR A SEMICONDUCTOR ELEMENT, AND A SEMICONDUCTOR ELEMENT PROVIDED WITH SAID SUBSTRATE

A METHOD FOR THE FORMATION OF AN INDIUM OXIDE FILM BY ELECTRO DEPOSITION PROCESS OR ELECTROLESS DEPOSITION PROCESS, A SUBSTRATE PROVIDED WITH SAID INDIUM OXIDE FILM FOR A SEMICONDUCTOR ELEMENT, AND A SEMICONDUCTOR ELEMENT PROVIDED WITH SAID SUBSTRATE

机译:通过电沉积过程或无电沉积过程形成氧化铟膜的方法,用于半导体元件的提供有氧化铟膜的基质以及通过所述基板提供的半导体形成膜的方法

摘要

The invention relates to a film-forming method for forming an indium oxide film on an electrically conductive substrate by immersing said substrate and a counter electrode in an aqueous solution containing at least nitrate ion and indium ion and flowing an electric current between said substrate and said counter electrode whereby causing the formation of said indium oxide film on said substrate and to a substrate for a semiconductor element and a photovoltaic element produced by using said film forming method. Moreover the invention relates to an aqueous solution for the formation of an indium oxide film by electroless deposition process, containing at least nitrate ion, indium ion and tartrate, to a film-forming method for the formation of an indium oxide film on a substrate by electroless deposition process, using said aqueous solution and to a substrate for a semiconductor element and a photovoltaic element produced by using said film forming method.
机译:本发明涉及在导电性基板上形成氧化铟膜的成膜方法,该方法是将上述基板和对电极浸渍在至少包含硝酸根离子和铟离子的水溶液中,并使电流在上述基板和上述基板之间流动。对电极,从而在所述衬底上形成氧化铟膜,并形成到使用所述膜形成方法制造的用于半导体元件和光伏元件的衬底。此外,本发明涉及一种用于通过无电沉积工艺形成氧化铟膜的水溶液,其至少包含硝酸根离子,铟离子和酒石酸盐,并且涉及一种通过以下方法在基板上形成氧化铟膜的成膜方法:化学沉积工艺,使用所述水溶液并通过使用所述成膜方法制备的半导体元件和光伏元件用基板。

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