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Electrochemical micromachining of titanium using laser oxide film lithography: excimer laser irradiation of anodic oxide

机译:使用激光氧化膜光刻技术对钛进行电化学微加工:准分子激光辐照阳极氧化物

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In electrochemical micromachining using oxide film laser lithography (OFLL), the pattern is formed by laser irradiation of an anodic oxide film. On the irradiated areas of the film the underlying metal is then selectively dissolved in an appropriate electrolyte, the non-irradiated oxide acting as a mask. The physical interactions of 308 nm XeCl excimer laser radiation with anodically formed oxide films on titanium were studied using single pulse irradiation at varying fluence and two different pulse durations. The irradiated surfaces were characterized by secondary electron microscopy (SEM), Auger electron spectroscopy (AES) profiling and X-ray-induced photoelectron spectroscopy (XPS), additionally, their electrochemical dissolution behaviour in an electropolishing electrolyte was evaluated. Numerical simulation was applied to the estimation of the temperature profiles at the surface of the irradiated samples. Results suggest that depending on irradiation conditions different mechanisms may be responsible for the loss of the protective properties of the oxide film. The creation of a Ti(O) solid solution resulting from diffusion of oxygen from the film into the underlying molten metal was shown to be effective at high fluences. The loss of protective properties observed at lower fluences was tentatively attributed to the creation of ionic defects in the oxide by a photolytic process. (C) 2003 Elsevier Science B.V. All rights reserved. [References: 43]
机译:在使用氧化膜激光光刻(OFLL)的电化学微加工中,通过对阳极氧化膜进行激光照射来形成图案。然后在膜的辐照区域上,将下面的金属选择性地溶解在适当的电解质中,未辐照的氧化物充当掩模。研究了308 nm XeCl准分子激光辐射与钛上阳极形成的氧化膜的物理相互作用,使用了不同能量密度和两个不同脉冲持续时间的单脉冲辐射。通过二次电子显微镜(SEM),俄歇电子能谱(AES)分布图和X射线诱导的光电子能谱(XPS)表征了被辐照的表面,此外,还评估了它们在电抛光电解质中的电化学溶解行为。数值模拟被应用于估计辐照样品表面温度分布。结果表明,取决于辐照条件,不同的机制可能是造成氧化膜保护性能下降的原因。结果表明,由于氧气从薄膜扩散到下面的熔融金属中而产生的Ti(O)固溶体在高通量下是有效的。较低通量下观察到的保护性能的损失暂时归因于通过光解过程在氧化物中产生离子缺陷。 (C)2003 Elsevier Science B.V.保留所有权利。 [参考:43]

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