机译:占空比对在线脉冲直流磁控溅射法在电阻式触摸屏上沉积铟锡氧化物(ITO)膜的影响
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam City, Kyunggi-do 461-701, South Korea;
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam City, Kyunggi-do 461-701, South Korea;
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongnam City, Kyunggi-do 461-701, South Korea;
reverse time; frequency; pulsed dc sputtering; indium tin oxide (ITO); duty ratio;
机译:直流磁控溅射沉积铟锡氧化物(ITO)膜中锡浓度对触摸屏的影响
机译:在线脉冲DC溅射处理掺杂铝掺杂氧化锌膜的优化及其在电阻触摸板上的应用
机译:占空比对脉冲直流磁控溅射法沉积氧化铌膜的影响
机译:脉冲DC磁控溅射铟锡氧化物膜的表征与优化异质硅晶片太阳能电池应用
机译:用于微辐射热计应用的脉冲直流磁控溅射氧化钒薄膜的制备,表征和沉积后修饰
机译:氧浓度对超薄射频磁控溅射沉积铟锡氧化物薄膜作为光伏器件上电极的性能的影响
机译:脉冲直流磁控溅射沉积异质结硅晶片太阳能电池用氧化铟锡薄膜的表征与优化