机译:ICP-RIE干法刻蚀制备SiC纳米柱的自组装微掩膜效应
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Seoul 100715, Republic of Korea;
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Seoul 100715, Republic of Korea;
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Seoul 100715, Republic of Korea;
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Seoul 100715, Republic of Korea;
Department of Physics, Alagappa University, Karaikudi 630003, India;
Millimeter-wave INnovation Technology research center (MINT), Dongguk University, Seoul 100715, Republic of Korea;
Dry etching,Silicon carbide,ICP-RIE etching,Cl_2/Ar gas plasma,Self assembled micro mask,Nanopillar;
机译:通过自聚集Ni纳米点掩模对硅衬底进行干刻蚀而形成的高纵横比Si纳米柱的异常微光致发光
机译:缩小以Au / Cr自组装簇为蚀刻掩模通过反应离子蚀刻制造的硅纳米柱的横向尺寸
机译:使用自组织金属氧化物纳米柱掩模的干法刻蚀形成硅纳米结构。
机译:SiO_2膜上的自组装Ni纳米点-用于在Si衬底上形成Si纳米柱的新型反应离子刻蚀掩模
机译:在微机电系统的高密度等离子体源中干法蚀刻高纵横比的硅微结构。
机译:SiO2球形掩模的ICP刻蚀技术制备金刚石亚微米透镜和圆柱体
机译:TMMF干膜抗蚀剂在用于微流控芯片制造的耐热玻璃深腐蚀中作为掩膜层
机译:通过模板掩模进行干蚀刻的图案转移